Patent
1989-07-10
1992-03-24
Arnold, Bruce Y.
357 41, 357 45, H01L 29788
Patent
active
050992970
ABSTRACT:
An EEPROM memory cell structure and architecture that achieve very high speed programming with low power. The cell has four control terminals. The structure utilizes programming and erasure by electron tunneling only. The structure allows programming by hot electrons from the substrate and erasure by electron tunneling between polysilicon layers. A process for forming the structure results in final feature size for the floating gate and the space between floating gates in a memory array to be significantly smaller than achievable by photolithography equipment's resolution capability.
REFERENCES:
patent: 4402064 (1983-08-01), Arakawa
patent: 4477883 (1984-11-01), Wada
patent: 4628487 (1986-12-01), Smayling
patent: 4663740 (1987-05-01), Ebel
patent: 4754320 (1988-06-01), Mizutami et al.
patent: 4763299 (1988-08-01), Hazani
patent: 4794565 (1988-12-01), Wu et al.
patent: 4839705 (1989-06-01), Tigelaar et al.
patent: 4845538 (1989-07-01), Hazami
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 4868629 (1989-09-01), Eitan
patent: 4887238 (1989-12-01), Bergemont
patent: 4933904 (1990-06-01), Stewart et al.
R. Kazerounian et al., A 5 Volt High Density Poly-Poly Erase Flash EPROM Cell, IEDM-88 (Dec. 11).
J. Miyamoto et al., A 1.0 .mu.m CMOS/Bipolar Technology for VLSI Circuits, IEDM-83, (see FIG. 2).
T. Mizuno et al., Si.sub.3 N.sub.4 /SiO.sub.2 Spacer Induced High Reliability in LDDMOSFET and its Simple Degradation Model, IEDM-88 (see FIG. 1).
An Asymmetrical Lightly-Doped Source (ALDS) Cell for Virtual Ground High Density EPROMS, K. Yoshikawa et al., IEDM-88.
Arnold Bruce Y.
Dang Hung
LandOfFree
EEPROM cell structure and architecture with programming and eras does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with EEPROM cell structure and architecture with programming and eras, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM cell structure and architecture with programming and eras will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2014058