Method of fabricating poly-silicon resistor

Details Method of fabricating poly-silicon resistor Method of fabricating poly-silicon resistor

1994-09-01

1995-11-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 82, 437918, 148DIG136, H01L 2170

Patent

active

054707803

ABSTRACT:
The method of fabricating a poly-silicon resistor includes a step for providing a dopant gas and a nitrous oxide gas as well as a silane gas to thereby deposit a silicon layer on a substrate by chemical vapor deposition under a deposition temperature not higher than 600 degrees centigrade so that the silicon layer includes the dopant of the dopant gas and oxygen, and a step for annealing the silicon layer under a temperature not lower than 600 degrees centigrade.

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"Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650 C", Abstracts of the 20th Conference on Solid State Devices and Materials, Tokyo, 1988, by T. Kobayashi et al., pp. 57-60.
"A New Silicon Heterojunction Transistor Using the Doped Sipos", IEEE 1979 Tech. by N. Oh-uchi et al., pp. 522-525.

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