Fishing – trapping – and vermin destroying
Patent
1994-05-25
1995-11-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 41, 437 47, 437 48, 437228, H01L 2700, H01L 2170
Patent
active
054707773
ABSTRACT:
A semiconductor device in which a bit line (41), which is adhered to a contact hole (49) between polysilicon gate electrodes (35) and (36), is directly connected with an SiO.sub.2 film (53) having the same pattern on the gate electrodes; wherein an Si.sub.3 N.sub.4 layer (56) is buried outside the contact areas between the gate electrodes to approximately the same height as the SiO.sub.2 layer (53). The interlayer insulating film of the conventional memory cells array unit is no longer required, and it is not necessary to form contact holes in the interlayer insulating film. As a result, even if the gaps between the gates are designed to be small, there will be no short-circuiting between the bit line and word lines due to mask shifting, etc., making it possible to offer a highly integrated, highly reliable device.
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Nagata Toshiyuki
Niuya Takayuki
Yoshida Hiroyuki
Chaudhuri Olik
Donaldson Richard L.
Hiller William E.
Texas Instruments Incorporated
Tsai H. Jey
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