Method of forming a polysilicon-on-silicide capacitor

Details Method of forming a polysilicon-on-silicide capacitor Method of forming a polysilicon-on-silicide capacitor

1993-11-09

1995-11-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, 437200, H01L 2700, H01L 2170

Patent

active

054707757

ABSTRACT:
A method produces a capacitor. On a substrate, a first polysilicon layer is formed over an insulating region. A metal-silicide layer is formed on top of the first polysilicon layer. A dielectric layer is formed on top of the metal-silicide layer. A second polysilicon layer is formed on top of the dielectric layer. The second polysilicon layer and the dielectric layer are etched to form a top electrode and dielectric region. The metal-silicide layer and the first polysilicon layer are etched to form a bottom electrode.

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