Method of forming a polysilicon-on-silicide capacitor

Fishing – trapping – and vermin destroying

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437 60, 437919, 437200, H01L 2700, H01L 2170

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054707757

ABSTRACT:
A method produces a capacitor. On a substrate, a first polysilicon layer is formed over an insulating region. A metal-silicide layer is formed on top of the first polysilicon layer. A dielectric layer is formed on top of the metal-silicide layer. A second polysilicon layer is formed on top of the dielectric layer. The second polysilicon layer and the dielectric layer are etched to form a top electrode and dielectric region. The metal-silicide layer and the first polysilicon layer are etched to form a bottom electrode.

REFERENCES:
patent: 4922312 (1990-05-01), Coleman et al.
patent: 4975753 (1990-12-01), Ema
patent: 5017982 (1991-05-01), Kobayashi
patent: 5126279 (1992-06-01), Roberts
patent: 5132756 (1992-07-01), Matsuda
patent: 5173437 (1992-12-01), Chi
patent: 5218511 (1993-06-01), Nariani
patent: 5244825 (1993-09-01), Coleman et al.
patent: 5338701 (1994-08-01), Hsu et al.
Wolf, Silicon Processing for VLSI Era. vol. 2 pp. 189-193, 577-583, 1990.
C. Kaya H. Tigelaar, J. Paterson, M. de Wit, J. Fattaruso, D. Hester, S. Kiriakai, K. Tan, F. Tsay, "Polycide/Metal Capacitors for High Precision A/D Converters", IEDM, 1988, pp. 782-785.
T. Ono, T. Mori, T. Ajioka, T. Takayashiki, "Studies of Thin Poly Si Oxides for E and E.sup.2 PROM", IEDM, 1985, pp. 380-383.
T. Iida, M. Nakahara, S. Gotoh and H. Akiba, "Precise Capacitor Structure Suitable for Submicron Mixed Analog/Digital ASICs", Custom Integrated Circuits Conference, 1990, pp. 18.5.1-18.5.4.
Jim Paterson, "Adding Analog, EPROM and EEPROM modules to CMOS Logic Technology: How Modular?", IEDM, 1989, pp. 16.1.1-16.1.3.

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