High speed complementary field effect transistor logic circuits

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307443, 307451, 307449, H03K 19003, H03K 19017, H03K 19094, H03K 1704

Patent

active

050013670

ABSTRACT:
A high speed, high density, low power dissipation all parallel FET logic circuit includes a driving stage having a plurality of parallel FETs of a first conductivity type for receiving logic input signals and a load FET of second conductivity type connected to the common output of the driving stage. A complementary FET inverter including serially connected FETs of first and second conductivity type is connected to the common output and the load FET. According to the invention the voltage transfer function of the complementary inverter is skewed so that the product of the carrier mobility and the ratio of channel width to length of the inverter FET of the first conductivity type is made substantially greater than the product of the carrier mobility and the ratio of channel width to length of the inverter FET of the second conductivity type. By skewing the voltage transfer function of the complementary inverter the voltage lift-off interval is dramatically decreased, thereby improving the speed. AND and OR circuits and combined AND-OR circuits may be provided, having true and complement outputs. A multigate serial load transistor may further reduce power consumption.

REFERENCES:
patent: T952012 (1976-11-01), Lee
patent: 3728556 (1973-04-01), Arnell
patent: 3911289 (1975-10-01), Takemoto
patent: 4045692 (1977-08-01), Morokawa et al.
patent: 4053792 (1977-10-01), Cannistra et al.
patent: 4080539 (1978-03-01), Stewart
patent: 4216390 (1980-08-01), Stewart
patent: 4258272 (1981-03-01), Huang
patent: 4390988 (1983-06-01), Best et al.
patent: 4491741 (1985-01-01), Parker
patent: 4567385 (1986-01-01), Falater et al.
patent: 4645952 (1987-02-01), van Tran
patent: 4649296 (1987-03-01), Shoji
patent: 4701642 (1987-10-01), Pricer
patent: 4701643 (1987-10-01), Laude et al.
patent: 4764691 (1988-08-01), Jochem
patent: 4785204 (1988-11-01), Terada et al.
patent: 4798979 (1989-01-01), Lee et al.
patent: 4810906 (1989-03-01), Shah et al.
patent: 4877976 (1989-10-01), Lach et al.
Chadwick et al., "Circuit Gate Width as a Function of Ground Shift Designing", IBM Tech. Discl. Bull., vol. 21, No. 4, pp. 1560-1562, Sep. 1978.
Fink et al., Electronic Engineer's Handbook, pp. 16-16 to 16-19, 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High speed complementary field effect transistor logic circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed complementary field effect transistor logic circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed complementary field effect transistor logic circuits will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2012291

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.