Hydrogen passivated heteroepitaxial III-V photovoltaic devices g

Details Hydrogen passivated heteroepitaxial III-V photovoltaic devices g Hydrogen passivated heteroepitaxial III-V photovoltaic devices g

1995-04-17

1996-11-05

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136262, 437 5, 437132, 437133, 437248, 437937, 437939, 257431, H01L 31068, H01L 310304, H01L 3118

Patent

active

055713394

ABSTRACT:
A hydrogen passivated photovoltaic device such as a solar cell comprises a lattice mismatched substrate such as Ge or Si, and a hydrogen passivated heteroepitaxial layer such as InP grown on the substrate. The hydrogen passivated heteroepitaxial III-V photovoltaic device is produced by exposing a sample of a heteroepitaxial III-V material grown on a lattice-mismatched substrate to reactive hydrogen species at elevated temperatures. Reactive hydrogen forms bonds with dangling bonds along dislocations defined in the sample. The electrical activity in the dislocations is passivated as a result of the hydrogenation process.

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B. Chatterjee et al, Hydrogen Passivation of Dislocations in InP on GaAs Heterostructures, Appl. Phys. Lett. 65(1), 4 Jul. 1994, pp. 58-60.
T. A. Gessert et al, Conference Record, 21st IEEE Photovoltaic Specialists Conf. (1990), pp. 153-157.
C. E. Dube et al, Conference Record, 19th IEEE Photovoltaic Specialists Conf. (1987), pp. 1516-1517.
C. M. Leboeuf et al, Conference Record, 20th IEEE Photovoltaic Specialists Conf. (1988), pp. 644-648.

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