Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Patent
1989-12-29
1991-03-19
Nelms, David C.
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
357 30, H01J 4014
Patent
active
050013351
ABSTRACT:
Disclosed are an avalanche photodiode and a manufacturing method thereof. An n.sup.- -type InGaAs light absorption layer and n.sup.- -type InP window layer are formed on an n-type InP substrate by crystal growth, in the order mentioned. A depression is formed in a selected surface portion of the window layer, and n-type impurities are doped into the bottom of the depression, to thereby form an n-type high concentration region. Further, n.sup.- -type crystal-grown InP layer is formed in the depression in such a way as to fill the depression. A guard ring is formed around the depression by the doping of p-type impurities. By doping p-type impurities into the window layer, a p-type high concentration region is formed in the window layer in a manner completely surrounding the interface between the n-type high concentration region and the crystal-grown InP layer. The n-type and p-type high concentration regions define a junction serving as a light-receiving region. Since the interface of the crystal-grown InP layer, which may not have a satisfactory crystalline structure, is located within the p-type high concentration regions, that interface is not supplied with a high electric field during use. Accordingly, the performance of the avalanche photodiode is not influenced by the interface.
REFERENCES:
patent: 4586067 (1986-04-01), Webb
patent: 4586067 (1986-04-01), Webb
patent: 4877951 (1989-10-01), Muro
patent: 4914494 (1990-04-01), Webb
Technical Digest of the European Conference on Optical Communications, Helsinki, Sep. 13th-17th, 1987, vol. 1, pp. 55-61; T. Shirai et al.: "A New InP/GaInAs reach-through avalanche photodiode" *Figure 1*.
Patent Abstracts of Japan, vol. 12, No. 69 (E-587)[2916], Mar. 3rd, 1988; & JP-A-62 211 967 (Fujitsu Ltd) 17-09-1987 *Whole document*.
Matsumoto Kenji
Morinaga Motoyasu
Sadamasa Tetsuo
Suzuki Nobuo
Takaoka Keiji
Kabushiki Kaisha Toshiba
Nelms David C.
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