Substrate processing apparatus

Details Substrate processing apparatus Substrate processing apparatus

1992-05-28

1993-12-07

Rivell, John

Heat exchange

With retainer for removable article

165 805, 437248, 118724, F28F 700, H01L 21324

Patent

active

052676072

ABSTRACT:
A magnetron sputtering apparatus having a heating susceptor in a vacuum chamber to support a wafer. The wafer is fixed on a ring-shaped projection by clamps at wafer-mounted section on the top of the susceptor. A substantially closed space is formed between the underside of the wafer and that face on the top of the susceptor which is defined by the wafer-mounted section to oppose the underside of the wafer. Ar gas which serves as heat-medium gas is supplied into the closed space, flowing into it from its peripheral area. The Ar gas is exhausted at the center of the closed space by a vacuum pump. Heat is transmitted from the susceptor of the wafer through the Ar gas to set the wafer at a certain temperature.

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patent: 5096536 (1992-03-01), Cathey, Jr.

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