Junction between metal and zincblende-type III-V compound semico

Details Junction between metal and zincblende-type III-V compound semico Junction between metal and zincblende-type III-V compound semico

1990-06-29

1992-03-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 39, 437 81, 437175, 437177, 437178, 437184, 148DIG139, 148DIG140, 156612, H01L 2144

Patent

active

050988581

ABSTRACT:
The method of manufacturing the metal-semiconductor junction in accordance with the present invention includes the step of forming a 2.times.2 surface superstructure in an ultrahigh vacuum by removing an oxide layer by means of a heat cleaning at temperatures not lower than 600.degree. C. while irradiating a (111) A or (111) B surface of a zincblende-type III-V compound semiconductor substrate with a beam of a group V element, the step of cooling the substrate down to room temperature while maintaining the surface superstructure and the step of depositing a metal on the surface.

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