Fishing – trapping – and vermin destroying
Patent
1990-03-14
1991-03-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437912, 437958, 437 44, 437 36, 148DIG82, H01L 21265
Patent
active
050010778
ABSTRACT:
A method for producing a compound semiconductor device includes covering all but the top part of an electrode comprising a refractory metal or refractory metal silicide disposed on a compound semiconductor substrate with an insulating film, producing a photoresist which completely covers the insulating film at a first side of the electrode, the top part of the electrode, and at part of a second side of the electrode using the photoresist as a mask and removing the insulating film at the second side of the electrode, removing the photoresist, and ion implanting using the insulating film remaining at the first side of the electrode and the electrode as masks.
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Geissberger, A. E. et al., "A New Refractory Self Aligned Gate Technology for GaAs Microwave Power FET's and MMIC's", IEEE Trans. Elect. Dev, p. 615, vol. 35, #5 (May 88).
"A Self-Aligned Planar . . . MMICs", 1987 Proceedings of the IEEE GaAs IC Symposium, pp. 45-48.
Fleck Linda J.
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
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