Method of manufacturing a semiconductor device by mega-electron

Details Method of manufacturing a semiconductor device by mega-electron Method of manufacturing a semiconductor device by mega-electron

1990-07-05

1992-03-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 12, 437 26, H01L 21306, H01L 21265

Patent

active

050988522

ABSTRACT:
A method of manufacturing a semiconductor device includes forming desired semiconductor elements in a major surface region of a semiconductor substrate, and ion-implanting a selected element into the semiconductor substrate from the major surface of the substrate to form an ion-implanted layer by the implanted element. A heat treatment is performed to the ion-implanted substrate, causing the ion-implanted layer to getter contaminant heavy metals.

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Proximity gettering with mega-electron volt carbon and oxygen implantations, Appl. phys. Lett, 52.1023 (1988) H. Wong, N. W. Cheung P. K. Chu, J. Liu and J. W. Mayer.
High-Energy Ion Implantation Gettering Extended Abstracts (The 50th Autumn Meeting, 1989); the Japan Society of Applied Physics, No. 2, p. 608 29a-A-3.

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