Process for producing substrate for selective crystal growth, se

Details Process for producing substrate for selective crystal growth, se Process for producing substrate for selective crystal growth, se

1990-06-14

1992-03-24

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136258, 156612, 156627, 148DIG122, 437 89, 437 99, 437113, 437170, 437235, 437946, 437967, H01L 3118, H01L 310368, H01L 310392

Patent

active

050988506

ABSTRACT:
A process for producing a substrate for selective crystal growth, which comprises subjecting a substrate having a layer comprising a first material having higher nucleation density and a layer comprising a second material having lower nucleation density than the first material laminated thereon to application of an electrical field concentrated at a desired region of the layer comprising the second material, thereby removing the region whereby the layer comprising the first material is exposed.

REFERENCES:
patent: 4243432 (1981-01-01), Jordan et al.
patent: 4400409 (1983-08-01), Izu et al.
patent: 4661370 (1987-04-01), Tarrant
patent: 4800527 (1989-01-01), Ozaki et al.

Affiliated with

Also associated with

Rating

Process for producing substrate for selective crystal growth, se does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing substrate for selective crystal growth, se, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing substrate for selective crystal growth, se will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2009769