Semiconductor acceleration sensor

Details Semiconductor acceleration sensor Semiconductor acceleration sensor

1994-05-20

1996-04-02

Williams, Hezron E.

Measuring and testing

Speed, velocity, or acceleration

Acceleration determination utilizing inertial element

7351416, 73777, G01P 1508

Patent

active

055030173

ABSTRACT:
A semiconductor acceleration sensor including a trench provided in a main surface of a semiconductor substrate, the trench having a first inner wall, a second inner wall opposite to the first inner wall, and a third inner wall joining the first and second inner walls. A gate electrode faces the first, second and third inner walls of the trench through an air gap. A first semiconductor unit is formed in the first inner wall consisting of three adjoining semiconductor layers for detecting a displacement of the gate electrode relative to the first semiconductor unit induced by an applied acceleration, each of the three adjoining semiconductor layers in the first semiconductor unit having a different conductivity type. A second semiconductor unit is formed in the second inner wall consisting of three adjoining semiconductor layers for detecting a displacement of the gate electrode relative to the second semiconductor unit induced by an applied acceleration, each of the three adjoining semiconductor layers in the second semiconductor unit having a different conductivity type.

REFERENCES:
patent: 4342227 (1982-08-01), Petersen
patent: 4873871 (1989-10-01), Bai
patent: 4894698 (1990-01-01), Hijikigawa et al.
patent: 5138414 (1992-08-01), Shinohara

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