Mask for optical lithography using phase shift masking and integ

Details Mask for optical lithography using phase shift masking and integ Mask for optical lithography using phase shift masking and integ

1996-08-23

1997-12-30

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430314, 430394, G03F 900

Patent

active

057028486

ABSTRACT:
A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gate pattern with the active gate pattern and which divides the Intersection into categories of stacks where a slightly different phase assignment rules is employed for the different stacks.

REFERENCES:
patent: 5302477 (1994-04-01), Dao
patent: 5308722 (1994-05-01), Nistler
patent: 5308741 (1994-05-01), Kemp
patent: 5328807 (1994-07-01), Tanaka
patent: 5352550 (1994-10-01), Okamoto
T. Waas et al., Automatic Generation Of Phase Shift Mask Layouts, Microelectronic Engineering 23 Mar. (1994) pp. 139-142, Elsevier Science B.V.
K. Ooi et al., Computer Aided Design Software For Designing Phase-Shifting Masks, Jpn. J. Appl. Phys., vol. 32 (1993), Pt. 1, No. 12B, Dec. 1993, pp. 5887-5891.
A. Moniwa et al., Algorithm For Phase-Shifting Mask Design With Priority On Shifter Placement, Jpn. J. Appl. Phys., vol. 32 Jul. (1993), Pt. 1, No. 12B, pp. 5871-5879.
H. Jinbo et al., 0.2 .mu.m Or Less i-Line Lithography By Phase-Shifting-Mask Technology, 1990 International Electron Devices Meeting Technical Digest, Dec., 1990, pp. 004-007.

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