Avalanche photodiode with thin built-in depletion region

Details Avalanche photodiode with thin built-in depletion region Avalanche photodiode with thin built-in depletion region

1999-07-01

2000-08-15

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257438, H01L 310328, H01L 31107

Patent

active

061040479

ABSTRACT:
The present invention relates to an avalanche photodiode having a simple structure, high reliability, and a high speed response on the order of Gbps. This photodiode is formed by depositing laminated layers on a semiconductor substrate in the order of an n-type buffer layer, a semiconductor multiplication layer, a p-type semiconductor field buffer layer, a p-type semiconductor light absorbing layer, a p-type semiconductor cap layer, and a p-type semiconductor contact layer, and said p-type semiconductor light absorbing layer is constructed by two layers consisted of a depleted region of a thickness in the range of 10 nm to 0.3 .mu.m disposed adjacent to the p-type semiconductor field buffer layer and a non-depleted layer region at a thickness of less than 2 .mu.m disposed adjacent to the depleted layer region.

REFERENCES:
patent: 5552629 (1996-09-01), Watanabe
patent: 5654578 (1997-08-01), Watanabe

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