Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1999-06-10
2000-08-15
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257 72, H01L 2904, H01L 31036
Patent
active
061040428
ABSTRACT:
The present invention includes forming a gate on a transparent substrate. A gate isolation layer is then formed on the gate. An amorphous silicon (a-Si) layer and n+ doped silicon layer are successively formed on the gate isolation layer. Then, the a-Si layer and the n+ doped silicon layer are patterned. A first, a second and a third metal layers are successively formed on the n+ doped silicon layer, thereby forming a multi-metal layer structure. Subsequently, a wet and a dry etching is utilized to etch the multi-metal layer, thereby defining the S/D electrodes. A passivation layer is deposited on the S/D structure.
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Chi Mei Optoelectronics Corp.
Monin, Jr. Donald L.
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