Process for fabricating a semiconductor device

Details Process for fabricating a semiconductor device Process for fabricating a semiconductor device

1982-11-24

1983-11-08

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

219121LE, 219121LF, 427 531, B05D 306, H01L 21263

Patent

active

044142420

ABSTRACT:
A process for producing a semiconductor device includes the step of locally heating and fusing an island of a polycrystalline or amorphous semiconductor layer which is formed on and surrounded by an insulator. In the process, at least one ridge is formed on the underlying insulator before the formation of the semiconductor layer.

REFERENCES:
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4292091 (1981-09-01), Togei
patent: 4303455 (1981-12-01), Splinter et al.
patent: 4372990 (1983-02-01), Lam
patent: 4381202 (1983-04-01), Mori et al.
Lam, H. W., et al, "Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure . . . Substrate," IEEE Electron Device Letters, vol. EDL-1, No. 10, Oct. 1980.

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