Incremental printing of symbolic information – Light or beam marking apparatus or processes – Scan of light
Patent
1998-01-27
2000-10-03
Le, N.
Incremental printing of symbolic information
Light or beam marking apparatus or processes
Scan of light
347224, 2504922, 25049222, 250504R, 359328, 372 22, B41J 247
Patent
active
061280305
ABSTRACT:
A semiconductor light exposure device reducing coherency of laser light to an appropriate value by a simplified structure without producing speckles. The semiconductor light exposure device includes an ultraviolet light generating device, a uniform illumination device having the operation of inducing an optical path length difference and a projection device for projecting the laser light from the uniform illumination device. The ultraviolet light generating device includes an Nd:YAG Q-switch laser unit with a wavelength of 1064 nm, oscillated with a longitudinal single mode, a phase modulation unit or phase-modulating the fundamental laser light outgoing from the Nd:YAG Q-switch laser unit with voltage signals having plural frequency components, and a wavelength conversion unit for converting the wavelength of the fundamental laser light phase-modulated by the phase modulation unit into an ultraviolet laser light with a wavelength of 213 nm as a fifth harmonics.
REFERENCES:
patent: 5206515 (1993-04-01), Elliott et al.
patent: 5434662 (1995-07-01), Rockwell et al.
patent: 5473409 (1995-12-01), Takeda et al.
patent: 5488229 (1996-01-01), Elliott et al.
patent: 5559338 (1996-09-01), Elliott et al.
patent: 5621744 (1997-04-01), Kikuchi et al.
patent: 5760408 (1998-06-01), Kikuchi et al.
William N. Partlo, et al., "Reducing coherence in a fifth-harmonic YAG source (213nm) for use in microlithography", Journal of Vacuum Science & Technology B, vol. 9, No. 6, Nov. 1991, New York, US, pp. 3126-3131, XP 000268530.
J. M. Hutchinson, et al., "213nm Lithography", Microelectronic Engineering, vol. 21, No. 1/4, Apr. 1993, Amsterdam, NL, pp. 15-18, XP 000361044.
Hamatani Masato
Kaneda Yushi
Kikuchi Hiroki
Le N.
Nikon Corporation
Pham Hai C.
Sony Corporation
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