Trench forming process and integrated circuit device including a

Details Trench forming process and integrated circuit device including a Trench forming process and integrated circuit device including a

1997-10-28

2000-08-15

Chaudhuri, Olik

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438424, 438756, H01L 2176

Patent

active

061036358

ABSTRACT:
A process for forming a trench in a semiconductor material is provided. The process includes (a) providing a semiconductor substrate, a first mask layer adjacent the surface of the semiconductor substrate, and a second mask layer adjacent the surface of the first mask layer, the second mask layer defining a first open area and the first mask layer defining a second open area that is larger than the first open area and aligned therewith in a manner so that in the area of the openings the first mask layer is undercut with respect to the second mask layer; and (b) removing a portion of the semiconductor substrate through the open area defined by the second mask layer to form a trench in said semiconductor substrate. An IC device formed using the process is also provided.

REFERENCES:
patent: 4337115 (1982-06-01), Ikeda et al.
patent: 4767722 (1988-08-01), Blanchard
patent: 4893160 (1990-01-01), Blanchard
patent: 4967245 (1990-10-01), Cogan et al.
patent: 5002632 (1991-03-01), Loewenstein et al.
patent: 5072226 (1991-12-01), Bulucea et al.
patent: 5100822 (1992-03-01), Mitani
patent: 5168331 (1992-12-01), Hamza Yilmaz
patent: 5258332 (1993-11-01), Horioka et al.
patent: 5298442 (1994-03-01), Bulucea
patent: 5316959 (1994-05-01), Kwan et al.
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5410170 (1995-04-01), Bulucea et al.
patent: 5430324 (1995-07-01), Bencuya
patent: 5434447 (1995-07-01), Miyashita et al.
patent: 5468982 (1995-11-01), Hshieh et al.
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5532179 (1996-07-01), Chang et al.
patent: 5558313 (1996-09-01), Hshieh et al.
patent: 5578518 (1996-11-01), Koike
patent: 5578851 (1996-11-01), Hshieh et al.
patent: 5592005 (1997-01-01), Floyd et al.
patent: 5597765 (1997-01-01), Yilmaz et al.
patent: 5605852 (1997-02-01), Bencuya
patent: 5614751 (1997-03-01), Yilmaz et al.
patent: 5753554 (1998-05-01), Park
patent: 5753961 (1998-05-01), Tsuchiaki
patent: 5766823 (1998-06-01), Fumitomo
patent: 5858857 (1999-01-01), Ho
patent: 5863827 (1999-01-01), Joyner
patent: 5880004 (1999-03-01), Ho
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, p. 541, 1986.
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, pp. 51, 52, 54, 331.
Frank Goodenough, Dense MOSFET Enables Portable Power Control, "Tech Insights", Electronic Design, Apr. 14, 1997.

Affiliated with

Also associated with

Rating

Trench forming process and integrated circuit device including a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench forming process and integrated circuit device including a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench forming process and integrated circuit device including a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2006495