High-voltage device substrate structure and method of fabricatio

Details High-voltage device substrate structure and method of fabricatio High-voltage device substrate structure and method of fabricatio

1998-06-24

2000-08-15

Elms, Richard

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

438238, 438268, 438307, 438529, H01L 2176

Patent

active

061035890

ABSTRACT:
A method for fabricating a high-voltage device substrate comprising the steps of forming a pad oxide layer and a mask layer over a substrate. Then, the pad oxide layer and the mask layer are patterned to define a region for a first ion implantation. Next, the exposed substrate is oxidized to form a field oxide layer. Thereafter, the mask layer is removed followed by a first ion implantation. Next, the field oxide layer is completely removed. Subsequently, a photoresist layer is formed over the first ion implanted region. This is followed by a second ion implantation. Then, a conformal oxide layer is formed covering the substrate surface. Next, a high temperature drive-in and oxidation operation is carried out, in which ions in the first ion implanted region and the second ion implanted region are driven deeper into the substrate interior, and at the same time the substrate above those regions are oxidized. Finally, the oxide layer on the substrate surface is removed, and then an epitaxial layer is formed over the substrate.

REFERENCES:
patent: 5589695 (1996-12-01), Malhi
patent: 5734180 (1998-03-01), Malhi
patent: 5966608 (1999-10-01), Gong et al.

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