Photomask utilizing auxiliary pattern that is not transferred wi

Details Photomask utilizing auxiliary pattern that is not transferred wi Photomask utilizing auxiliary pattern that is not transferred wi

1998-03-17

2000-08-15

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

061034282

ABSTRACT:
A photomask for use in manufacturing a semiconductor includes a chrome pattern serving as a mask pattern. The chrome pattern is formed so as to have a size substantially equivalent to a wavelength of an exposure light at an interval substantially equivalent to the wavelength. The chrome pattern includes a band-shaped first chrome pattern and a second chrome pattern having a side in the widthwise direction substantially orthogonal to the side in the lengthwise direction of the first chrome pattern. Then, auxiliary patterns of a size of not more than the wavelength of the exposure light, which have a function of reducing the exposure light or shifting the phase of the exposure light, are formed at both corners of the side of the second chrome pattern so as to partially overlap the second chrome pattern. When forming a resist pattern of a size substantially equivalent to the wavelength of the exposure light or a resist pattern at an interval substantially equivalent to the wavelength of the exposure light, the described photomask suppresses the backward shift of the corner of the first resist pattern corresponding to the auxiliary patterns as well as the deformation of the second resist pattern positioned apart from the corner by a distance substantially equivalent to the wavelength of the exposure light.

REFERENCES:
patent: 5786113 (1998-07-01), Hashimoto et al.
patent: 5840447 (1998-11-01), Peng

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