MESFET with non-uniform doping

Details MESFET with non-uniform doping MESFET with non-uniform doping

1978-01-30

1980-03-11

Wojciechowicz, Edward J.

357 23, 357 90, 357 91, H01L 2978

Patent

active

041930797

ABSTRACT:
A high frequency FET having a channel region and wherein said channel region contains an implant, said implant having a first dosage concentration at a first distance from the gate of said FET and a second dosage concentration at a second distance from the said gate and wherein said first distance is larger than said second distance and said first dosage concentration is larger than said second dosage concentration.

REFERENCES:
patent: 4021835 (1977-05-01), Masuhara
patent: 4053925 (1977-10-01), Burr

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