Variable oscillation wavelength semiconduction laser device

Details Variable oscillation wavelength semiconduction laser device Variable oscillation wavelength semiconduction laser device

1990-04-16

1991-01-01

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 23, 372 50, 372 97, H01S 319, H01S 3082

Patent

active

049824082

ABSTRACT:
In a semiconductor laser device for emitting a laser beam of a variable frequency depending on a current applied to the laser device, there are provided a semiconductor substrate, an optical waveguide structure formed on the substrate having two or more semiconductor light emission layers and barrier layers having a wider band gap then that of the light emission layers, alternately stacked, clad layers stacked on the opposite sides of the waveguide structure and having a lower refractive index than that of the waveguide structure, and a device for applying a current to the light emission layers, and the wave guide structure includes at least first and the second light emission layers which respectively emit lights having different wavelengths.

REFERENCES:
patent: 4602370 (1986-07-01), Tsang
van der Ziet, "Laser Oscillation from Quantrum States in Very Fine GaAs-Al.sub.0.2 Ga.sub.0.8 As Multilayer Structures", Appl. Phys. Lett. vol. 26, No. 8, Apr. 15, 1975, pp. 463-465.
Tsang "Cu Multiwavelength Trasverse Junction-Stripe Laser Grown by Molecular Beam Epitaxy Operating Predominantly in Single-Longitudinal Modes," Appl. Phys. Lett, vol. 36, No. 6, Mar. 15, 1980, pp. 441-443.
Applied Physics Letters, vol. 50, No. 7, Feb. 1987, pp. 392-394, American Institute of Physics, N.Y. Deppe et al., "Impurity-Induced Layer-Disordered Buried Heterostructure AlxGgl-xAs-GsAs Quantum Well Edge-Injection Laser Array".

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