Method of producing semiconductor devices

Details Method of producing semiconductor devices Method of producing semiconductor devices

1982-02-23

1983-11-08

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 148187, H01L 2122

Patent

active

044134037

ABSTRACT:
Disclosed is a method of producing semiconductor devices, comprising forming a laminate of a lower poly-Si film and an upper silicon nitride film on the substrate surface in a manner to provide a pattern of electrodes and wiring layer, removing the patterned silicon nitride film except the region in which a conductive layer is brought into contact with the underneath poly-Si film later, subjecting the substrate surface region to thermal oxidation so as to form a silicon oxide film covering the exposed surface of the substrate and the exposed surface of the poly-Si film, and removing the remaining silicon nitride film.

REFERENCES:
patent: 4072545 (1978-02-01), De La Moneda
patent: 4180826 (1979-12-01), Shappir
patent: 4231051 (1980-10-01), Custode et al.
patent: 4253229 (1981-03-01), Yeh et al.
patent: 4282647 (1981-08-01), Richman

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