Method of manufacturing a buried contact in semiconductor device

Details Method of manufacturing a buried contact in semiconductor device Method of manufacturing a buried contact in semiconductor device

1981-10-22

1983-11-08

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, H01L 21265

Patent

active

044134029

ABSTRACT:
Method of forming buried contact in recessed gate MOSTEK technology is provided. When the buried contact is desired, a MOS transistor is formed and the gate and underlying gate oxide layer removed to expose the substrate. A conducting layer through the aperture formed makes contact to the substrate.

REFERENCES:
patent: 3673679 (1972-07-01), Carajal
patent: 3691627 (1972-09-01), Engeler
patent: 3996657 (1976-12-01), Simko
patent: 4219379 (1980-08-01), Athanas
patent: 4271582 (1981-06-01), Shirai
patent: 4294002 (1981-10-01), Jambotkar
patent: 4299862 (1981-11-01), Donley
patent: 4318216 (1982-03-01), Hsu
"A New Self-Aligned Contact Technology", Tanigaki, Y., Solid-State Science and Technology, J. Electrochem. Soc., Mar. 1978, pp. 471-472.

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