Preparation of extrinsic semiconductors for electric heating

Compositions – Electrically conductive or emissive compositions – Metal compound containing

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427 87, H01B 106

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039533727

ABSTRACT:
The invention relates to a method of preparing extrinsic semiconductors, useful for electric heating, comprising the step of putting onto a glass, ceramic, etc., surface a transparent semiconductive heating coating of low stable resistance, which is tolerant to high electric loading.
As the basic substance of the conductive coatings chemical compounds in which the cation has variable valence, for instance halides or oxides of tin, bismuth or niobium, are used.
To the basic substance a thermo-electric buffer is added. This substance supplies a characteristic enabling regulation of conduction in the coating as a function of temperature, as a result of the existence of excess current carriers. At lower temperatures these carriers enlarge the conduction, and at higher temperatures, they diminish the conduction.
For use as a thermo-electric buffer, such chemical compounds must have a cation which has an ion radius smaller by at least 20 per cent than that of the cation of the basic substance, for instance: oxides, halides, carbides, carbonates. In the case of electron type conduction in the extrinsic semiconductor, a buffer compound, in which the cation has a valence lower than that of the basic substance cation maximal valence, is used. In the case of hole type conduction, a buffer compound in which the cation has a valence higher than that of the basic substance cation valence, is used.
The prepared extrinsic semiconductor is put onto a heated surface in two layers. First, the basic substance is applied and next the mixture of thermo-electric buffer and the basic substance is applied.

REFERENCES:
patent: 2687395 (1954-08-01), Marks
patent: 3654187 (1972-04-01), Takenaka
patent: 3669907 (1972-06-01), Kohashi et al.
patent: 3692573 (1972-09-01), Gurwood
patent: 3719609 (1973-03-01), Topol

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