Method for producing a capacitor dielectric with inner blocking

Details Method for producing a capacitor dielectric with inner blocking Method for producing a capacitor dielectric with inner blocking

1978-05-23

1980-03-11

Arnold, Donald J.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

252520, 264 66, C04B 1904, G04B 3332

Patent

active

041928407

ABSTRACT:
A capacitor dielectric with inner blocking layers is disclosed wherein the portion of copper located in intermediate layers between the crystallites is enriched toward the crystallite surfaces. The dielectric is produced by a heating speed of 200.degree. to 800.degree. C./h towards a sinter temperature, and a cooling-off speed of 10.degree. to 100.degree. C./h to about 350.degree. C. below the sinter temperature.

REFERENCES:
patent: 2277733 (1942-03-01), Wainer et al.
patent: 2277734 (1942-03-01), Wainer et al.
patent: 2277736 (1942-03-01), Wainer et al.
patent: 3441517 (1969-04-01), Brauer et al.
patent: 3569802 (1971-03-01), Brauer
patent: 4131903 (1978-12-01), Schmelz et al.
"Resistance Anomaly in Semiconductor BaTiO.sub.3 Ceramic in the Range Under Curie Temp.", by H. Brauer, vol. 17, 1974, Solid State Electronics, pp. 1013-1019.

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