Power rectifier with trenches

Details Power rectifier with trenches Power rectifier with trenches

1989-10-02

1991-01-01

Mintel, William

357 15, 357 22, 357 58, H01L 2974, H01L 2948, H01L 2980, H01L 2912

Patent

active

049822608

ABSTRACT:
A semiconductor power rectifier attains low forward voltage drop, low reverse leakage current and improved switching speed by utilizing Schottky contact regions in a p-i-n rectifier along with other means for reducing the required forward bias voltage. In a preferred embodiment, the other means for reducing the required forward bias voltage includes a respective trench between each respective pair of successively spaced current interruption means.

REFERENCES:
patent: 4571815 (1986-02-01), Baliga et al.
patent: 4587712 (1986-05-01), Baliga
patent: 4641174 (1987-02-01), Baliga
patent: 4827321 (1989-05-01), Baliga

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