Optoelectronic integrated circuit

Details Optoelectronic integrated circuit Optoelectronic integrated circuit

1988-10-24

1991-01-01

Wojciechowicz, Edward J.

357 16, 357 17, 357 41, H01L 2714

Patent

active

049822560

ABSTRACT:
An optoelectronic integrated circuit comprises an optical device such as a photodiode and a semiconductor laser provided on a semi-insulating InP substrate and buried except for an operating plane with a high resistance buried layer, and a field effect transistor provided on a strain buffer layer which is provided on the semi-insulating InP substrate. The top surfaces of the optical device and the high resistance buried layer are of the approximately same position levels. Therefore, an optoelectronic integrated circuit is fabricated with a high yield and a high performance.

REFERENCES:
patent: 4593304 (1986-06-01), Slayman et al.
patent: 4736231 (1988-04-01), Ayabe et al.

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