Schottky contact

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Details

357 60, 357 22, 357 61, H01L 2948, H01L 2904, H01L 2980

Patent

active

049822438

ABSTRACT:
A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.

REFERENCES:
patent: 3896473 (1975-07-01), DiLorenzo et al.
patent: 4740263 (1988-04-01), Imai et al.

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