Lateral bidirectional notch FET with gates at non-common potenti

Details Lateral bidirectional notch FET with gates at non-common potenti Lateral bidirectional notch FET with gates at non-common potenti

1985-05-13

1986-09-16

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 234, 357 2314, 357 43, 357 55, 357 59, 357 39, 357 86, 307304, H03K 17687

Patent

active

046124659

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Split gate electrodes in the notch proximate the channels control bidirectional conduction, and are at non-common potentials in the OFF state to increase breakdown voltage. Self-shielding of the gates is also disclosed to further increase OFF state breakdown voltage.

REFERENCES:
patent: 4199774 (1980-04-01), Plummer
patent: 4414560 (1983-11-01), Lidow
J. Tihanyi, "Functional Integration of Power MOS and Bipolar Devices", 1980, I.E.D.M. Tech. Digest, CH1616-2, pp. 75-78.

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