Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1998-09-29

2000-08-15

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

118723I, 118723AN, 118723MW, 156345, 438729, C23C 16509

Patent

active

061019704

ABSTRACT:
An inductively coupled type dry etching apparatus has an RF antenna disposed on a dielectric wall forming the ceiling of a process chamber. The process chamber is divided into a plasma generating space and a processing space by the partition of an intermediate electrode. A susceptor is arranged in the processing space, for mounting a semiconductor wafer thereon. The partition has openings for the plasma generating space and the processing space to communicate with each other. The partition is formed of a plurality of conductive beams radially arranged. The conductive beams extend in directions perpendicular to the direction of an electric field generated by the RF antenna, and have warps to absorb thermal stress.

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patent: 5821705 (1998-10-01), Caporaso et al.
patent: 5846885 (1998-12-01), Kamata et al.
patent: 5904780 (1999-05-01), Tomoyasu

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