Method of making high density dynamic memory cell

Details Method of making high density dynamic memory cell Method of making high density dynamic memory cell

1983-02-28

1985-08-27

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148187, 357 51, 357 59, 357 91, H01L 2170, H01L 2122, B01J 1700

Patent

active

045369410

ABSTRACT:
A dynamic read/write memory cell of the one transistor N-channel silicon gate type is made by a triple-level polysilicon process which allows the bit lines to be formed by metal strips which have low resistance and which can cover the storage capacitors for alpha particle protection. Metal-to-silicon contacts are made through an intervening polysilicon segment which allows the underlying N+ silicon region to be much smaller than in prior cells. The polysilicon segment also prevents the occurrance of problems with spiking of metal through shallow implanted N+ regions.

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patent: 4388121 (1983-06-01), Mohan Rao
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4403394 (1983-09-01), Shepard et al.
Rideout IBM-TDB, 21 (1979), 3823.

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