Method for thermally oxidizing polycide substrates in a dry oxyg

Details Method for thermally oxidizing polycide substrates in a dry oxyg Method for thermally oxidizing polycide substrates in a dry oxyg

1984-12-21

1986-09-16

Page, Thurman K.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

427 58, 427 93, 427 96, 427 99, 4272481, 427255, 4272553, 428333, 428686, H01L 2912, B05D 512

Patent

active

046122583

ABSTRACT:
A method of thermally oxidizing polycide substrates in a dry oxygen environment as well as a MOSFET structure provided by the method are disclosed. The method includes heating a plurality of polycide substrates to temperatures greater than about 800 degrees Centigrade in a dry oxygen environment, and introducing into the environment an amount of a halogenated alkane gas sufficient to induce oxidation.

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Crowder et al., "1 .mu.m MOSFET VLSI Technology: Part VII, IEEE Journal of Solid-State Circuits, vol. SC-14, No. 2, 04/1979, pp. 291-293.
Murarka et al., "Refractory Silicides", IEEE Transactions of Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1409-1417.

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