Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1988-04-22
1991-01-01
Stoll, Robert L.
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
156603, 156DIG64, 156DIG68, 156DIG13, C01B 3136
Patent
active
049816659
ABSTRACT:
Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns. The crystals may be in the form of separate particles, e.g. separate platelets, or may comprise an intergrown structure. The crystalline silicon carbide of the invention is produced by heating a porous alpha silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100.degree. C. to 2500.degree. C. in a non-reactive atmosphere. The materials are high performance materials finding use in reinforcing, high temperature thermal insulating, improvement of thermal shock resistance, and modification of electrical properties.
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Boecker Wolfgang D. G.
Chwastiak Stephen
Korzekwa Tadeusz M.
Lau Sai-Kwing
Cuomo Lori F.
Stemcor Corporation
Stoll Robert L.
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