Power transistor

Details Power transistor Power transistor

1977-12-12

1979-04-24

Wojciechowicz, Edward J.

357 36, 357 89, 357 90, H01L 29721

Patent

active

041515412

ABSTRACT:
A bipolar transistor includes an emitter zone having two regions of different doping levels. The more highly doped region is a surface-adjoining region located in the lower-doped region, extending only partially through the lower-doped region and laterally surrounding a central portion thereof. The transistor also includes a surface-adjoining base contact zone which surrounds the emitter zone and is laterally spaced apart from the more highly-doped region of the emitter zone. Additionally, a surface-adjoining conductive electrode is provided for contacting both the more highly-doped emitter region and the central portion of the less-highly doped region of the emitter zone. This configuration results in a transistor having improved reverse breakdown characteristics.

REFERENCES:
patent: 4035824 (1977-07-01), Suzuki
patent: 4080619 (1978-03-01), Suzuki

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