High beta, high frequency transistor structure

Details High beta, high frequency transistor structure High beta, high frequency transistor structure

1977-12-08

1979-04-24

Wojciechowicz, Edward J.

357 55, 357 88, 357 89, 357 91, H01L 2972

Patent

active

041515404

ABSTRACT:
High beta, high frequency transistors require very narrow and high resistance base structures, thereby placing a low limit of collector-emitter voltages that may be used without encountering "punch-through" breakdown. This invention permits the use of normal collector-emitter voltages without danger of punch-through problems by injecting into the high resistance base material an impurity grid that serves both as an electrostatic shield to increase the voltage breakdown level, and as a means of reducing the apparent lateral base resistance, thereby further increasing the high frequency capability of the device without degrading the high beta characteristics.

REFERENCES:
patent: 3906545 (1975-09-01), Schlangenotto et al.
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4035825 (1977-07-01), Kirschner

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