Solid-state photoelectric imaging device with reduced smearing

Details Solid-state photoelectric imaging device with reduced smearing Solid-state photoelectric imaging device with reduced smearing

1995-12-15

1996-12-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257249, 257435, 257637, 257640, H01L 27148, H01L 29768

Patent

active

055856535

ABSTRACT:
A solid-state imaging device which restrains the smear phenomenon effectively without reduction of the dielectric breakdown strength between the transfer electrode and the light shielding film. A first insulating film covers photoelectrical converting regions each of which receives incident light through the first insulation film to generate and store a signal charge. A second insulating film covering a charge transfer region is of a layered structure containing a first insulation layer with a relatively lower dielectric constant such as SiO.sub.2 and a second insulation layer with a relatively higher dielectric constant such as Si.sub.3 N.sub.4. The distance between the transfer electrode and the light shielding film can be decreased, providing decrease in thickness of the first insulating film. The smear phenomenon is restrained effectively without reduction of the dielectric breakdown strength between the transfer electrode and the light shielding film.

REFERENCES:
patent: 4914493 (1990-04-01), Shiromizu
patent: 5181093 (1993-01-01), Kawaura
patent: 5306926 (1994-04-01), Yonemoto
patent: 5334867 (1994-08-01), Shin et al.
patent: 5424775 (1995-06-01), Kamisaka et al.
Yasuo Ihsihara et al., "A High Photosensitivity IL-CCD Image Sensor With Monolithic Resin Lens Array," IEDM, 1983, pp. 497-500.
Nobukazu Teranishi et al., "Smear Reduction in the Interline CCD Image Sensor," IEEE Transactions on Electron Devices, vol. ED-34, No. 5, May 1987, pp. 1052-1056.

Affiliated with

Also associated with

Rating

Solid-state photoelectric imaging device with reduced smearing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid-state photoelectric imaging device with reduced smearing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state photoelectric imaging device with reduced smearing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1993513