Coherent light generators – Particular active media – Semiconductor
Patent
1996-08-02
1997-08-26
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
056617437
ABSTRACT:
A semiconductor laser includes an n type GaAs semiconductor substrate, an n type AlGaAs cladding layer, an active layer producing light having a wavelength equal to or larger than 900 nm, a p type AlGaAs cladding layer, and an n type AlGaAs current blocking layer having a current concentrating structure. The n type AlGaAs current blocking layer comprises Al.sub.x Ga.sub.1-x As having an Al composition ratio x smaller than an Al composition ratio of the p type AlGaAs cladding layer, and is doped with Si to a concentration equal to or larger than 1.times.10.sup.19 cm.sup.-3. Therefore, since more V.sub.III -Si.sub.Ga complexes C are produced in the AlGaAs current blocking layer than those produced when the current blocking layer is GaAs and absorption of light having a wavelength of 0.9.about.1.2 .mu.m is promoted, generation of higher-order modes is reliably suppressed and laser light having a fundamental mode is stably produced. Consequently, a semiconductor laser for exciting a fiber amplifier and excellent as a pumping light source of an optical fiber is realized.
REFERENCES:
patent: 5325385 (1994-06-01), Kasukawa et al.
patent: 5351258 (1994-09-01), Okumura et al.
Oh-hori et al., "Donor-Cation Vacancy Complex In Si-Doped AlGaAs Grown By Metalorganic Chemical Vapor Deposition", Journal of Applied Physics, vol. 61, No. 9, May 1987, pp. 4603-4605.
Davie James W.
Mitsubishi Denki & Kabushiki Kaisha
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