Photodiode array device and method for producing same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257462, H01L 2974

Patent

active

053671880

ABSTRACT:
The improved photodiode array has a structure that has pn-junctions arranged in a row on a semiconductor substrate 1 having an oxide film 2. The photodiode array has such a surface pattern that n-type impurity diffused layers 3 and p-type impurity diffused layers 4 are arranged in a generally concentric manner or with layers of one diffusion type alternating with layers of the other diffusion type. The improved process of fabrication comprises joining the oxide film 2 on the semiconductor substrate 1 to an n-type semiconductor layer 3 and then diffusing a p-type impurity within the n-type semiconductor layer 3 to form pn-junctions, thereby yielding a photodiode array. Thereby, it is provided a photodiode array that has such a simple structure that not only is he yield of device fabrication improved but also the cost of the final product is reduced.

REFERENCES:
patent: 3690953 (1972-09-01), Wise
patent: 3745424 (1973-07-01), Ohuchi et al.
patent: 3988774 (1976-10-01), Cohen-Solal et al.
patent: 3994012 (1976-11-01), Warner, Jr.

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