Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-03-30
1997-08-26
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
36518528, 257316, 257336, 257344, G11C 1300
Patent
active
056616872
ABSTRACT:
An electrically programmable floating gate memory cell is gate programmed with tunneling electrons and is not drain erasable. The memory cell comprises a semiconductor substrate, source and drain regions disposed in the semiconductor substrate, a floating gate conductor adjacent to the source and drain regions, a tunnel oxide layer disposed between the floating gate conductor and the source and drain regions, and a control gate conductor adjacent to the floating gate conductor. The source and drain regions each include a high impurity concentration portion and a low impurity concentration portion. The impurity concentration of the low impurity concentration portion is sufficiently low to prevent a substantial threshold voltage variation when a predetermined range of voltages are supplied in a first polarity between the control gate conductor and the drain region.
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Bailey Wayne P.
Fears Terrell W.
Ley John R.
Symbios Logic Inc.
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