Method for making highly integrated semiconductor connecting dev

Fishing – trapping – and vermin destroying

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437 60, 148DIG20, H01L 21441

Patent

active

053669304

ABSTRACT:
A semiconductor connecting device and a method for making the same are disclosed. The semiconductor connecting device is comprised of a device separation insulating film, a source region and a drain region formed at predetermined portions of a semiconductor substrate; an interlayer insulating film formed on the device separation insulating film and on the drain region, having a contact hole through which a portion of the device separation film are exposed along with a portion of the drain region; a conductive plug formed on the exposed portion of the drain region and on the exposed portion of the drain region within the contact hole, the drain region-sided conductive plug being thinner than the device separation insulating film-sided one; and bit lines formed on the conductive material plug and the interlayer insulating film, coming into contact with them, respectively. In accordance with the present invention, the bit line connected with the drain region scarcely overlaps the source region where the charge storage electrode is formed, bring about the reduction of area as minimally as possible along with a highly integrated semiconductor device.

REFERENCES:
patent: 4906593 (1990-03-01), Shioya et al.
patent: 5081060 (1992-01-01), Kim
patent: 5114879 (1992-05-01), Madan
patent: 5219792 (1993-06-01), Kim et al.
patent: 5223448 (1993-06-01), Su

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