Method for fabricating a split polysilicon SRAM cell

Details Method for fabricating a split polysilicon SRAM cell Method for fabricating a split polysilicon SRAM cell

1994-02-07

1994-11-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 51, 437 60, 437 48, H01L 2170

Patent

active

053669185

ABSTRACT:
An SRAM semiconductor device comprises a first layer, a second layer and a third layer of polysilicon are separated by dielectric layers formed on a substrate, and a split gate structure with transistors formed in different polysilicon levels. Preferably, the split gate structure includes pull down transistors and pass gate transistors formed in different polysilicon levels; the second polysilicon layer extends into contact with the substrate; the second polysilicon layer contacts the third polysilicon layer in an interconnection region; and the third polysilicon layer comprises a polysilicon load resistor.

REFERENCES:
patent: 4910576 (1990-03-01), Campbell et al.
patent: 5079611 (1992-01-01), Ikeda et al.
patent: 5132240 (1992-07-01), Shimomura et al.
patent: 5270243 (1993-12-01), Tuan et al.
patent: 5272103 (1993-12-01), Nakamura

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