Process of fabricating floating gate type field effect transisto

Details Process of fabricating floating gate type field effect transisto Process of fabricating floating gate type field effect transisto

1993-08-16

1994-11-22

Hearn, Brian

Fishing, trapping, and vermin destroying

437 30, 437 35, H01L 21266

Patent

active

053669150

ABSTRACT:
In a process of fabricating a floating gate type field effect transistor, an ion implantation for forming a drain region is repeated more than twice at different angles, and the drain region has an impurity profile gently changed by virtue of the ion implantation at the different angles so that a drain disturbe is effectively suppressed, thereby improving the stability of the data bit stored in the floating gate type field effect transistor.

REFERENCES:
patent: 5155369 (1992-10-01), Current
patent: 5190887 (1993-03-01), Tang et al.
patent: 5217910 (1993-06-01), Shimizu et al.
Kodama et al., "A Symmetrical Side Wall (SSW)-DSA Cell for a 64Mbit Flash Memory" by IEDM, pp. 303-306, 1991.

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