Vertical power MOSFET structure having reduced cell area

Details Vertical power MOSFET structure having reduced cell area Vertical power MOSFET structure having reduced cell area

1993-01-29

1994-11-22

Fourson, George

Fishing, trapping, and vermin destroying

437203, H01L 21265

Patent

active

053669142

ABSTRACT:
In a vertical power field effect transistor, a side surface of a gate electrode is covered with a side oxide film, and a groove is formed in self-alignment with the side oxide film to extend from a surface area of a silicon substrate between a pair of adjacent gate electrodes, to reach a base region. A tungsten film is filled into the groove thus formed, and a source electrode-is formed in contact with the tungsten film within the groove.

REFERENCES:
patent: 5023196 (1991-06-01), Johnsen et al.
patent: 5128278 (1992-07-01), Harada et al.
patent: 5182222 (1993-01-01), Malhi et al.

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