Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

1994-02-23

1994-11-22

Hearn, Brian

Fishing, trapping, and vermin destroying

437 21, 437162, 437913, 148DIG150, H01L 21265

Patent

active

053669096

ABSTRACT:
A method for fabricating a thin film transistor capable of increasing an ON/OFF current ratio and decreasing a consumption of electric power. The method includes the steps of sequentially depositing an insulating film and a first, high concentration p type semiconductor layer over a substrate, selectively removing a portion of the first semiconductor layer corresponding to a channel region, thereby forming a source region and a drain region, depositing a second, undoped semiconductor layer over the entire exposed surface of the resulting structure and implanting ions for controlling a threshold voltage in the second semiconductor layer, sequentially depositing a gate insulating film and a third semiconductor layer for a gate electrode over the entire exposed surface of the resulting structure and patterning the third semiconductor layer and the gate insulating film such that the third semiconductor layer and the gate insulating film are overlapped with the source region while being offset to the drain region, thereby forming the gate electrode, implanting p type impurity ions in a low concentration in an exposed portion of the second semiconductor layer using the gate electrode as a mask, and diffusing the p type impurity ions doped in both the source region and the drain region into the second semiconductor layer.

REFERENCES:
patent: 4294555 (1984-03-01), Mano et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 5100810 (1992-03-01), Yoshimi et al.
Paper Entitled "16Mbit SRAM Cell Technologies for 2.0V Operation" by H. Ohkubo, et al. Printed in the IEDM in 1991, pp. 481-484.
Paper Entitled "A Polysilicon Transistor Technology for Large Capacity SRAMs" by S. Ikeda, et al., Printed in the IEDM in 1990, pp. 469-472.

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