Method for forming high resistance resistors for limiting cathod

Details Method for forming high resistance resistors for limiting cathod Method for forming high resistance resistors for limiting cathod

1995-07-14

1996-12-17

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437916, 313306, 3151691, H01L 2170

Patent

active

055853013

ABSTRACT:
A method for forming resistors for regulating current in a field emission display comprises integrating a high resistance resistor into circuitry for the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

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