Method of producing metal semiconductor field effect transistor

Details Method of producing metal semiconductor field effect transistor Method of producing metal semiconductor field effect transistor

1995-11-03

1996-12-17

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437912, 437 44, H01L 218252

Patent

active

055852890

ABSTRACT:
A field effect transistor includes a semi-insulating GaAs substrate; source, gate, and drain electrodes disposed on a surface of the GaAs substrate; a low carrier concentration active region disposed in the GaAs substrate lying beneath the gate electrode; intermediate carrier concentration regions disposed in the GaAs substrate at opposite sides of and in contact with the low carrier concentration active region; high carrier concentration source and drain regions disposed in the GaAs substrate at opposite sides of and in contact with the intermediate carrier concentration regions and lying beneath the source and drain electrodes, respectively; and first and second high carrier concentration regions having a carrier concentration as high as or higher than that of the high carrier concentration source and drain regions. The first and second high carrier concentration regions are disposed in the intermediate carrier concentration regions and reach the surface. In this structure, extension of a surface depletion layer in the vicinity of the gate is restricted to the first and second high carrier concentration regions, so that the depletion layer and surface levels so not adversely affect device characteristics.

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