Fishing – trapping – and vermin destroying
Patent
1995-06-02
1996-12-17
Thomas, Tom
Fishing, trapping, and vermin destroying
437 3, H01L 31055
Patent
active
055852807
ABSTRACT:
A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250.degree. C. using tetraethoxysilane (TEOS) as the silicon source gas.
REFERENCES:
patent: 4906850 (1990-03-01), Beerlage
patent: 4924282 (1990-05-01), Komiyama et al.
patent: 5101285 (1992-03-01), Kawai et al.
patent: 5153438 (1992-08-01), Kingsley et al.
patent: 5187369 (1993-02-01), Kingsley et al.
patent: 5233181 (1993-08-01), Kwansnick et al.
patent: 5254480 (1993-08-01), Tran
patent: 5401668 (1995-03-01), Kwansnick et al.
Kingsley Jack D.
Kwasnick Robert F.
Wei Ching-Yeu
General Electric Company
Ingraham Donald S.
Mulpuri S.
Thomas Tom
LandOfFree
Method of fabricating solid state radiation imager with high int does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating solid state radiation imager with high int, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating solid state radiation imager with high int will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1990689