Semiconductor diffused resistor

Details Semiconductor diffused resistor Semiconductor diffused resistor

1995-01-26

1997-08-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257532, 257528, 257539, 257544, 257773, H01L 2900

Patent

active

056613326

ABSTRACT:
A diffused resistor capable of suppressing variation of characteristics caused by leakage of current occurring under high-temperature conditions. An N-type layer is epitaxially grown on a P-type substrate, and an N-type resistor island isolated by a P-type isolation region is formed. A P-type diffused resistor is formed in the island. An N-type region of high impurity concentration is disposed in close proximity to the high-potential end of the P-type diffused resistor. An electrode is brought into contact with not only the high-potential end but also the N-type high-impurity concentration region through the same contact hole. Thus, a parasitic transistor, which is formed from the P-type diffused resistor, the N-type resistor island and the P-type substrate (P-type isolation region), can be prevented from turning on with a minimal increase of the element area.

REFERENCES:
patent: 4001869 (1977-01-01), Brown
patent: 5111068 (1992-05-01), Kusakabe
patent: 5315149 (1994-05-01), Compagne
Otsuka et al: "Temperature Compensation Methods for Junction Isolated Analog Integrated Circuits and Their Applications", pp. 797-806, Dec. 1991 .

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